Dmitri Z. Garbuzov
Encyclopedia
Dmitri Z. Garbuzov was one of the pioneers and inventors of room temperature continuous-wave-operating diode laser
s and high-power diode lasers
.
Diode lasers were successfully invented, developed, and almost simultaneously demonstrated at the Ioffe Physico-Technical Institute in Leningrad, Russia
by a team including Garbuzov and Zhores Alferov (winner of the 2000 Nobel Prize for Physics), and by the competing team of I. Hayashi and M. Panish at Bell Telephone Laboratories in Murray Hill, New Jersey. Both teams attained this accomplishment in 1969. Garbuzov was also responsible for the development of practical high-power, high-efficiency, diode lasers at a variety of wavelength bands from visible to mid-infrared wavelengths.
Following perestroika
, Garbuzov, who had served as an accomplished and respected scientist and manager within the Soviet scientific research system, established a research group in the West which employed multiple Russian émigré scientists and simultaneously contributed to three American for-profit enterprises.
, Russia in 1940. His father, Zalman Garbuzov, was a prominent engineer. His mother was Natalia Polivoda. He married Galina Minina and they have two children, Alina and Dmitri.
Garbuzov succumbed to cancer, diagnosed at an advanced stage, in August 2006 at the age of 65 at his home in Princeton, New Jersey.
for their pioneering work.
The achievement of the first 300ºK continuous wave diode laser was reported in Investigation of the influence of the AlGaAs-GaAs heterostructure parameters on the laser threshold current and the realization of the continuous emission at the room temperature
Dmitri Garbuzov received his Ph.D. in 1968, and Doctor of Science degree in 1979. In the Russian system, the Doctor of Science is the second doctoral degree which is awarded to suitable candidates who can lead research.
in 1948. The laser was invented by Charles Hard Townes
and Arthur Leonard Schawlow
, Gordon Gould
and by Aleksandr Prokhorov, but there was no practical laser "chip" which would make the laser the everyday item we use today.
Shortly after Townes and Schawlow, the possibility of lasing in a semiconductor device was recognized. The first major accomplishment in this context was the observation of nearly 100% internal efficiency in conversion of electron-hole pairs to photons in GaAs semiconductor devices by MIT Lincoln Laboratory
, RCA
Laboratories, and Texas Instruments
, Inc. in 1962, followed by the demonstration of the first diode laser by General Electric
and IBM
shortly thereafter. The new devices operated only at cryogenic temperatures (typically that of liquid nitrogen
, that is, at 77°K (–196°C). For practical use, it would be necessary to demonstrate diode laser action at room temperature.
competition and secrecy, albeit with sporadic scientific contacts at international conferences and during specially arranged international visits, and the question of primacy of invention has been debated over many years. However, there is general consensus among scientists in the semiconductor laser field that the concept that led to the first room-temperature diode laser: the double-heterostructure laser, was invented in the Soviet Union in 1964 by Rudolf F. Kazarinov and Zhores Alferov and recorded in a Russian patent application filed that year. For that invention and several other seminal seminal contribution to the semiconductor lasers Rudolf F. Kazarinov won the 1998 Quantum Electronics Award of the IEEE Photonics Society (see below at References).
While the Nobel Prize committee was satisfied that the Russian team reached the accomplishment prior to Hayashi and Panish at Bell Labs, there continues to be discussion on this point among members of the scientific community, and the matter may never be resolved.
Today, as a result of the accomplishments of Garbuzov and other scientists in the field, diode lasers transformed the semiconductor laser into a functioning device, paving the way for many applications that we take for granted today such as CDs, DVDs, and fiberoptic communications. Other devices using this type of laser include spectroscopic sensing systems, laser printers, laser machine tools for automobile manufacture, and other applications.
In 1979, Garbuzov became head of the Semiconductor Luminescence and Injection Emitters Laboratory at the A.F. Ioffe Physical Technical Institute. Heterojunctions of quaternary solid solutions of InGaAsP/InP were investigated under his leadership. Lasers based on such structures are the basis of today's optical communications.
He led research on re-radiation effects in double heterojunctions. His group at the Ioffe Institute established almost 100% external efficiency of luminescence in GaAlAs heterostructures. This gave birth to another practical application — a new class of semiconductor alphanumeric displays. In 1987, Garbuzov and colleagues were awarded the State Prize for this achievement, the second highest civilian award in the former Soviet Union.
Aluminum-free diode heterostructure lasers became the next step in his scientific life. He suggested and developed lasers with wavelengths of 0.75-1.0 µm, including those of visible (red) wavelengths.
In 1991 Garbuzov became a corresponding member of the Russian Academy of Sciences.
for his work on Al-free diode lasers, and with it financial support for one year of work in Germany. He used the Award for an extended visit in 1992 to conduct research on InAlGaAs/InGaAs distributed feedback lasers at Dieter Bimberg]’s laboratory at the Technical University in Berlin.
in Evanston, IL, he decided to join both Princeton University
and Sarnoff Corporation
(formerly RCA Laboratories), in Princeton, New Jersey. In 1997 he was joined by long-time collaborator Viktor B. Khalfin, a semiconductor physics theorist.
Garbuzov continued to advance the performance of semiconductor devices at both institutions and later became a Senior Member of Technical Staff at Sarnoff Corporation, where he remained until May 2000. At Sarnoff, Garbuzov worked on antimonide-based lasers demonstrating record wavelengths of 2.7 µm. At the same time, he made a significant impact in high power diode lasers and their heterostructures by introducing the "broadened waveguide," a concept which now serves as a basis for the entire industry producing high power lasers for industrial applications (U.S. Patent 5,818,860).
In 1972, Dr. Garbuzov, together with Dr. Alferov and other colleagues, was awarded the Lenin Prize, the highest civilian award in the Soviet Union of that era. The Lenin Prize's citation was "Fundamental Research of Heterojunctions in Semiconductors and Development of Novel Devices on their Bases."
Garbuzov received, with his team, the 1987 State Prize, the second highest prize awarded within the Soviet Union.
In 1991 Garbuzov was honored by becoming a member of the Russian Academy of Sciences
.
Garbuzov received the Humboldt Prize
in 1992.
.
Laser
A laser is a device that emits light through a process of optical amplification based on the stimulated emission of photons. The term "laser" originated as an acronym for Light Amplification by Stimulated Emission of Radiation...
s and high-power diode lasers
Laser diode
The laser diode is a laser where the active medium is a semiconductor similar to that found in a light-emitting diode. The most common type of laser diode is formed from a p-n junction and powered by injected electric current...
.
Diode lasers were successfully invented, developed, and almost simultaneously demonstrated at the Ioffe Physico-Technical Institute in Leningrad, Russia
Russia
Russia or , officially known as both Russia and the Russian Federation , is a country in northern Eurasia. It is a federal semi-presidential republic, comprising 83 federal subjects...
by a team including Garbuzov and Zhores Alferov (winner of the 2000 Nobel Prize for Physics), and by the competing team of I. Hayashi and M. Panish at Bell Telephone Laboratories in Murray Hill, New Jersey. Both teams attained this accomplishment in 1969. Garbuzov was also responsible for the development of practical high-power, high-efficiency, diode lasers at a variety of wavelength bands from visible to mid-infrared wavelengths.
Following perestroika
Perestroika
Perestroika was a political movement within the Communist Party of the Soviet Union during 1980s, widely associated with the Soviet leader Mikhail Gorbachev...
, Garbuzov, who had served as an accomplished and respected scientist and manager within the Soviet scientific research system, established a research group in the West which employed multiple Russian émigré scientists and simultaneously contributed to three American for-profit enterprises.
Personal life
Dmitri Zalmanovitch Garbuzov was born in SverdlovskYekaterinburg
Yekaterinburg is a major city in the central part of Russia, the administrative center of Sverdlovsk Oblast. Situated on the eastern side of the Ural mountain range, it is the main industrial and cultural center of the Urals Federal District with a population of 1,350,136 , making it Russia's...
, Russia in 1940. His father, Zalman Garbuzov, was a prominent engineer. His mother was Natalia Polivoda. He married Galina Minina and they have two children, Alina and Dmitri.
Garbuzov succumbed to cancer, diagnosed at an advanced stage, in August 2006 at the age of 65 at his home in Princeton, New Jersey.
Early career
In 1962 Dmitri graduated from the Department of Physics of Leningrad State University. In 1964, Dmitri joined the group of Zhores Alferov at Ioffe Physical-Technical Institute of the Russian Academy of Sciences in Leningrad. At the time, Alferov's team was among the very few research groups in the world that studied heterojunctions in semiconductors. In 2000, Zhores Alferov and Herbert Kroemer were awarded the Nobel PrizeNobel Prize
The Nobel Prizes are annual international awards bestowed by Scandinavian committees in recognition of cultural and scientific advances. The will of the Swedish chemist Alfred Nobel, the inventor of dynamite, established the prizes in 1895...
for their pioneering work.
The achievement of the first 300ºK continuous wave diode laser was reported in Investigation of the influence of the AlGaAs-GaAs heterostructure parameters on the laser threshold current and the realization of the continuous emission at the room temperature
Dmitri Garbuzov received his Ph.D. in 1968, and Doctor of Science degree in 1979. In the Russian system, the Doctor of Science is the second doctoral degree which is awarded to suitable candidates who can lead research.
Background
The 1969 demonstration of the first room-temperature diode laser that crowned years of scientific and technological research developments involving optical semiconductors. These accomplishments parallel and lag the microelectronics revolution beginning with the demonstration of the first transistorTransistor
A transistor is a semiconductor device used to amplify and switch electronic signals and power. It is composed of a semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current...
in 1948. The laser was invented by Charles Hard Townes
Charles Hard Townes
Charles Hard Townes is an American Nobel Prize-winning physicist and educator. Townes is known for his work on the theory and application of the maser, on which he got the fundamental patent, and other work in quantum electronics connected with both maser and laser devices. He shared the Nobel...
and Arthur Leonard Schawlow
Arthur Leonard Schawlow
Arthur Leonard Schawlow was an American physicist. He is best remembered for his work on lasers, for which he shared the 1981 Nobel Prize in Physics with Nicolaas Bloembergen and Kai Siegbahn.-Biography:...
, Gordon Gould
Gordon Gould
Gordon Gould was an American physicist who is widely, but not universally, credited with the invention of the laser. Gould is best known for his thirty-year fight with the United States Patent and Trademark Office to obtain patents for the laser and related technologies...
and by Aleksandr Prokhorov, but there was no practical laser "chip" which would make the laser the everyday item we use today.
Shortly after Townes and Schawlow, the possibility of lasing in a semiconductor device was recognized. The first major accomplishment in this context was the observation of nearly 100% internal efficiency in conversion of electron-hole pairs to photons in GaAs semiconductor devices by MIT Lincoln Laboratory
Lincoln Laboratory
MIT Lincoln Laboratory, located in Lexington, Massachusetts, is a United States Department of Defense research and development center chartered to apply advanced technology to problems of national security. Research and development activities focus on long-term technology development as well as...
, RCA
RCA
RCA Corporation, founded as the Radio Corporation of America, was an American electronics company in existence from 1919 to 1986. The RCA trademark is currently owned by the French conglomerate Technicolor SA through RCA Trademark Management S.A., a company owned by Technicolor...
Laboratories, and Texas Instruments
Texas Instruments
Texas Instruments Inc. , widely known as TI, is an American company based in Dallas, Texas, United States, which develops and commercializes semiconductor and computer technology...
, Inc. in 1962, followed by the demonstration of the first diode laser by General Electric
General Electric
General Electric Company , or GE, is an American multinational conglomerate corporation incorporated in Schenectady, New York and headquartered in Fairfield, Connecticut, United States...
and IBM
IBM
International Business Machines Corporation or IBM is an American multinational technology and consulting corporation headquartered in Armonk, New York, United States. IBM manufactures and sells computer hardware and software, and it offers infrastructure, hosting and consulting services in areas...
shortly thereafter. The new devices operated only at cryogenic temperatures (typically that of liquid nitrogen
Liquid nitrogen
Liquid nitrogen is nitrogen in a liquid state at a very low temperature. It is produced industrially by fractional distillation of liquid air. Liquid nitrogen is a colourless clear liquid with density of 0.807 g/mL at its boiling point and a dielectric constant of 1.4...
, that is, at 77°K (–196°C). For practical use, it would be necessary to demonstrate diode laser action at room temperature.
Invention of room temperature diode laser
The invention of the first room-temperature diode laser in the Soviet Union occurred during a climate of intense Cold WarCold War
The Cold War was the continuing state from roughly 1946 to 1991 of political conflict, military tension, proxy wars, and economic competition between the Communist World—primarily the Soviet Union and its satellite states and allies—and the powers of the Western world, primarily the United States...
competition and secrecy, albeit with sporadic scientific contacts at international conferences and during specially arranged international visits, and the question of primacy of invention has been debated over many years. However, there is general consensus among scientists in the semiconductor laser field that the concept that led to the first room-temperature diode laser: the double-heterostructure laser, was invented in the Soviet Union in 1964 by Rudolf F. Kazarinov and Zhores Alferov and recorded in a Russian patent application filed that year. For that invention and several other seminal seminal contribution to the semiconductor lasers Rudolf F. Kazarinov won the 1998 Quantum Electronics Award of the IEEE Photonics Society (see below at References).
While the Nobel Prize committee was satisfied that the Russian team reached the accomplishment prior to Hayashi and Panish at Bell Labs, there continues to be discussion on this point among members of the scientific community, and the matter may never be resolved.
Today, as a result of the accomplishments of Garbuzov and other scientists in the field, diode lasers transformed the semiconductor laser into a functioning device, paving the way for many applications that we take for granted today such as CDs, DVDs, and fiberoptic communications. Other devices using this type of laser include spectroscopic sensing systems, laser printers, laser machine tools for automobile manufacture, and other applications.
Later years in Russia
In subsequent years, Garbuzov developed the highest power diode lasers at wavelengths from 0.8 to 2.7 µm, introducing a new and revolutionary laser design to accomplish this, and made many contributions to new laser devices and businesses that produced them.In 1979, Garbuzov became head of the Semiconductor Luminescence and Injection Emitters Laboratory at the A.F. Ioffe Physical Technical Institute. Heterojunctions of quaternary solid solutions of InGaAsP/InP were investigated under his leadership. Lasers based on such structures are the basis of today's optical communications.
He led research on re-radiation effects in double heterojunctions. His group at the Ioffe Institute established almost 100% external efficiency of luminescence in GaAlAs heterostructures. This gave birth to another practical application — a new class of semiconductor alphanumeric displays. In 1987, Garbuzov and colleagues were awarded the State Prize for this achievement, the second highest civilian award in the former Soviet Union.
Aluminum-free diode heterostructure lasers became the next step in his scientific life. He suggested and developed lasers with wavelengths of 0.75-1.0 µm, including those of visible (red) wavelengths.
In 1991 Garbuzov became a corresponding member of the Russian Academy of Sciences.
Berlin
After the collapse of the Soviet Union, Garbuzov received the Humboldt AwardThe Humboldt Prize
The Humboldt Prize, also known as the Humboldt Research Award, is an award given by the Alexander von Humboldt Foundation to internationally renowned scientists and scholars, and is currently valued at € 60,000 with the possibility of further support during the prize winner's life. Up to one...
for his work on Al-free diode lasers, and with it financial support for one year of work in Germany. He used the Award for an extended visit in 1992 to conduct research on InAlGaAs/InGaAs distributed feedback lasers at Dieter Bimberg]’s laboratory at the Technical University in Berlin.
Princeton University and Sarnoff Corporation
In 1994, following a year's visit with the group of Manijeh Razeghi at Northwestern UniversityNorthwestern University
Northwestern University is a private research university in Evanston and Chicago, Illinois, USA. Northwestern has eleven undergraduate, graduate, and professional schools offering 124 undergraduate degrees and 145 graduate and professional degrees....
in Evanston, IL, he decided to join both Princeton University
Princeton University
Princeton University is a private research university located in Princeton, New Jersey, United States. The school is one of the eight universities of the Ivy League, and is one of the nine Colonial Colleges founded before the American Revolution....
and Sarnoff Corporation
Sarnoff Corporation
Sarnoff Corporation, with headquarters in West Windsor Township, New Jersey, was a research and development company specializing in vision, video and semiconductor technology....
(formerly RCA Laboratories), in Princeton, New Jersey. In 1997 he was joined by long-time collaborator Viktor B. Khalfin, a semiconductor physics theorist.
Garbuzov continued to advance the performance of semiconductor devices at both institutions and later became a Senior Member of Technical Staff at Sarnoff Corporation, where he remained until May 2000. At Sarnoff, Garbuzov worked on antimonide-based lasers demonstrating record wavelengths of 2.7 µm. At the same time, he made a significant impact in high power diode lasers and their heterostructures by introducing the "broadened waveguide," a concept which now serves as a basis for the entire industry producing high power lasers for industrial applications (U.S. Patent 5,818,860).
Princeton Lightwave
In 2000, Garbuzov became one of the founders of Princeton Lightwave Inc., where he was Vice President of Research, where he continued his work on high-power stripe lasers. Garbuzov's work led to the acquisition of a portion of PLI by the TRUMPF Group, a manufacturer of industrial laser metal-forming and manufacturing equipment.Citations
- H. Lee, P.K. York, R.J. Menna, R.U. Martinelli, D.Z. Garbuzov, S.Y. Narayan, and J.C. Connolly, Room-temperature 2.78 µm AlGaAsSb/InGaAsSb quantum-well lasers, Applied Physics Letters volume 66, issue 15, page 1942,(1995)
- D.Z. Garbuzov et al."2.3-2.7 room temperature CW operation of InGaAsSb/AlGaAsSb broad waveguide SCH-QW diode lasers". IEEE Photon. Technology Letters v. 11 pp. 794–796, (1999).
- G. Gu, D.Z. Garbuzov, P.E. Burrows, S. Venkatesh, S.R. Forrest, and M.E. Thompson, High-external-quantum-efficiency organic light-emitting devices, Optics Letters volume 22, page 396.
- V. Bulović, V.B. Khalfin, G. Gu, P.E. Burrows, D.Z. Garbuzov, S.R. Forrest Weak microcavity effects in organic light-emitting devices, Physical Review B volume 58, page 3730.
- L.J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DiMarco, J. C. Connolly, M. Jansen, F. Fang, and R.F. Nabiev,.8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers, Applied Physics Letters volume 69, page 1532.
U.S. patents
| Patent Number | Title |
|---|---|
| 7,084,444 | Method and apparatus for improving efficiency in opto-electronic radiation source devices |
| 6,650,671 | Semiconductor diode lasers with improved beam divergence |
| 6,650,045 | Displays having mesa pixel configuration |
| 6,600,764 | High power single mode semiconductor laser |
| 6,556,611 | Wide stripe distributed Bragg reflector lasers with improved angular and spectral characteristics |
| 6,459,715 | Master-oscillator grating coupled power amplifier with angled amplifier section |
| 6,404,125 | Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
| 6,366,018 | Apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
| 6,330,263 | Laser diode having separated, highly-strained quantum wells |
| 6,301,279 | Semiconductor diode lasers with thermal sensor control of the active region temperature |
| 6,133,520 | Heterojunction thermophotovoltaic cell |
| 6,125,226 | Light emitting devices having high brightness |
| 6,091,195 | Displays having mesa pixel configuration |
| 6,046,543 | High reliability, high efficiency, integratable organic light emitting devices and methods of producing same |
| 6,005,252 | Method and apparatus for measuring film spectral properties |
| 5,986,268 | Organic luminescent coating for light detectors |
| 5,874,803 | Light emitting device with stack of OLEDS and phosphor downconverter |
| 5,834,893 | High efficiency organic light emitting devices with light directing structures |
| 5,818,860 | High power semiconductor laser diode |
Awards and prizes
The Nobel Prize Committee awarded the 2000 Nobel Prize for Physics to Zhores Alferov as the leader of the Soviet team to discover and invent the room temperature diode laser.In 1972, Dr. Garbuzov, together with Dr. Alferov and other colleagues, was awarded the Lenin Prize, the highest civilian award in the Soviet Union of that era. The Lenin Prize's citation was "Fundamental Research of Heterojunctions in Semiconductors and Development of Novel Devices on their Bases."
Garbuzov received, with his team, the 1987 State Prize, the second highest prize awarded within the Soviet Union.
In 1991 Garbuzov was honored by becoming a member of the Russian Academy of Sciences
Russian Academy of Sciences
The Russian Academy of Sciences consists of the national academy of Russia and a network of scientific research institutes from across the Russian Federation as well as auxiliary scientific and social units like libraries, publishers and hospitals....
.
Garbuzov received the Humboldt Prize
Humboldt Prize
The Humboldt Prize, also known as the Humboldt Research Award, is an award given by the Alexander von Humboldt Foundation to internationally renowned scientists and scholars, and is currently valued at € 60,000 with the possibility of further support during the prize winner's life. Up to one...
in 1992.
See also
For researchers in optoelectronics R & D at Sarnoff Corporation see Millstone River PhotonickersMillstone River Photonickers
Millstone River Photonickers is an informal affinity association of those individuals associated with the development of semiconductor diode laser technology at RCA Laboratories and its successor organization Sarnoff Corporation, as well as companies and government or university groups which have...
.