Charge trap flash
Encyclopedia
Charge Trap Flash is a new technology for the fabrication of NAND
flash device
s. It was invented by Samsung Electronics
in 2006. The technology depends on a SONOS
(semiconductor-oxide-nitride-oxide-semiconductor) or MONOS (metal-ONOS) capacitor structure, storing the information in charge traps in the nitride layer.
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1609340 Kinam Kim, "Technology for sub-50nm DRAM and NAND flash manufacturing," Electron Devices Meeting, 2005. IEDM Technical Digest, pp.323- 326.
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1546329 Sanghun Jeon, et al. "High work-function metal gate and high-κ dielectrics for charge trap flash memory device applications," IEEE Trans. Elect. Dev., vol. 52 no. 12, pp. 2654-2659, Dec. 2005.
Nand
NAND may stand for:*Nand , an Indian classical raga.*Logical NAND , a binary operation in logic.**NAND gate, an electronic gate that implements a logical NAND....
flash device
Flash memory
Flash memory is a non-volatile computer storage chip that can be electrically erased and reprogrammed. It was developed from EEPROM and must be erased in fairly large blocks before these can be rewritten with new data...
s. It was invented by Samsung Electronics
Samsung Electronics
Samsung Electronics is a South Korean multinational electronics and information technology company headquartered in Samsung Town, Seoul...
in 2006. The technology depends on a SONOS
SONOS
SONOS, short for "Silicon-Oxide-Nitride-Oxide-Silicon", is a type of non-volatile computer memory closely related to Flash RAM. It is distinguished from mainstream flash by the use of silicon nitride instead of polysilicon for the charge storage material. A further variant is "SHINOS"...
(semiconductor-oxide-nitride-oxide-semiconductor) or MONOS (metal-ONOS) capacitor structure, storing the information in charge traps in the nitride layer.
Further reading
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1609340 Kinam Kim, "Technology for sub-50nm DRAM and NAND flash manufacturing," Electron Devices Meeting, 2005. IEDM Technical Digest, pp.323- 326.
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1546329 Sanghun Jeon, et al. "High work-function metal gate and high-κ dielectrics for charge trap flash memory device applications," IEEE Trans. Elect. Dev., vol. 52 no. 12, pp. 2654-2659, Dec. 2005.