Saturation current
Encyclopedia
Saturation current is a term used in relation to semiconductor
diode
s. It is more fully, and accurately, named reverse saturation current and is "part of the reverse current in a diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage." (Steadman 1993, 459)
IS, the reverse bias saturation current for an ideal p-n diode
is given by, (Schubert 2006, 61)
where
Semiconductor
A semiconductor is a material with electrical conductivity due to electron flow intermediate in magnitude between that of a conductor and an insulator. This means a conductivity roughly in the range of 103 to 10−8 siemens per centimeter...
diode
Diode
In electronics, a diode is a type of two-terminal electronic component with a nonlinear current–voltage characteristic. A semiconductor diode, the most common type today, is a crystalline piece of semiconductor material connected to two electrical terminals...
s. It is more fully, and accurately, named reverse saturation current and is "part of the reverse current in a diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage." (Steadman 1993, 459)
IS, the reverse bias saturation current for an ideal p-n diode
Diode
In electronics, a diode is a type of two-terminal electronic component with a nonlinear current–voltage characteristic. A semiconductor diode, the most common type today, is a crystalline piece of semiconductor material connected to two electrical terminals...
is given by, (Schubert 2006, 61)
where
- IS is the reverse bias saturation current,
- e is elementary chargeElementary chargeThe elementary charge, usually denoted as e, is the electric charge carried by a single proton, or equivalently, the absolute value of the electric charge carried by a single electron. This elementary charge is a fundamental physical constant. To avoid confusion over its sign, e is sometimes called...
- A is the cross-sectional area
- Dp,n are the diffusion coefficients of holes and electrons, respectively,
- ND,A are the donor and acceptor concentrations at the n side and p side, respectively,
- ni is the intrinsic carrier concentration in the semiconductor material, are the carrier lifetimes of holes and electrons, respectively.