Sputter deposition
Encyclopedia
Sputter deposition is a physical vapor deposition
(PVD) method of depositing thin film
s by sputtering
, that is ejecting, material from a "target," that is source, which then deposits onto a "substrate," such as a silicon wafer. Resputtering
is re-emission of the deposited material during the deposition process by ion or atom bombardment.
Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction — order 1% — of the ejected particles are ionized) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering). Alternatively, at higher gas pressures, the ions collide with the gas atoms that act as a moderator and move diffusively, reaching the substrates or vacuum chamber wall and condensing after undergoing a random walk. The entire range from high-energy ballistic impact to low-energy thermalized motion is accessible by changing the background gas pressure. The sputtering gas is often an inert gas such as argon. For efficient momentum transfer, the atomic weight of the sputtering gas should be close to the atomic weight of the target, so for sputtering light elements neon is preferable, while for heavy elements krypton or xenon are used. Reactive gases can also be used to sputter compounds. The compound can be formed on the target surface, in-flight or on the substrate depending on the process parameters. The availability of many parameters that control sputter deposition make it a complex process, but also allow experts a large degree of control over the growth and microstructure of the film.
industry to deposit thin films of various materials in integrated circuit
processing. Thin antireflection coatings on glass for optical
applications are also deposited by sputtering. Because of the low substrate temperatures used, sputtering is an ideal method to deposit contact metals for thin-film transistor
s. Perhaps the most familiar products of sputtering are low-emissivity
coatings on glass
, used in double-pane window assemblies. The coating is a multilayer containing silver
and metal oxide
s such as zinc oxide
, tin oxide
, or titanium dioxide
. Sputtering is also used to metalize plastics such as potato chip bags. A large industry has developed around tool bit coating using sputtered nitrides, such as titanium nitride
, creating the familiar gold colored hard coat. Sputtering is also used as the process to deposit the metal (e.g. aluminium) layer during the fabrication of CDs and DVDs.
Hard disk surfaces use sputtered CrOx and other sputtered materials. Sputtering is one of the main processes of manufacturing optical waveguides and is another way for making efficient photovoltaic solar cells.
is problematic or impossible. Sputter deposited films have a composition close to that of the source material. The difference is due to different elements spreading differently because of their different mass (light elements are deflected more easily by the gas) but this difference is constant. Sputtered films typically have a better adhesion on the substrate than evaporated films. A target contains a large amount of material and is maintenance free making the technique suited for ultrahigh vacuum applications. Sputtering sources contain no hot parts (to avoid heating they are typically water cooled) and are compatible with reactive gases such as oxygen. Sputtering can be performed top-down while evaporation must be performed bottom-up. Advanced processes such as epitaxial growth are possible.
Some disadvantages of the sputtering process are that the process is more difficult to combine with a lift-off process for structuring the film. This is because the diffuse transport, characteristic of sputtering, makes a full shadow impossible. Thus, one cannot fully restrict where the atoms go, which can lead to contamination problems. Also, active control for layer-by-layer growth is difficult compared to pulsed laser deposition
and inert sputtering gases are built into the growing film as impurities.
. The extra argon ions created as a result of these collisions leads to a higher deposition rate. It also means that the plasma
can be sustained at a lower pressure. The sputtered atoms are neutrally charged and so are unaffected by the magnetic trap. Charge build-up on insulating targets can be avoided with the use of RF sputtering where the sign of the anode-cathode bias is varied at a high rate. RF sputtering works well to produce highly insulating oxide films but only with the added expense of RF power supplies and impedance matching networks. Stray magnetic fields leaking from ferromagnetic targets also disturb the sputtering process. Specially designed sputter guns with unusually strong permanent magnets must often be used in compensation.
. A source can work without any magnetic field like in a hot filament ionization gauge
. In a Kaufman
source ions are generated by collisions with electrons that are confined by a magnetic field as in a magnetron. They are then accelerated by the electric field emanating from a grid toward a target. As the ions leave the source they are neutralized by electrons from a second external filament. IBS has an advantage in that the energy and flux of ions can be controlled independently. Since the flux that strikes the target is composed of neutral atoms, either insulating or conducting targets can be sputtered. IBS has found application in the manufacture of thin-film heads for disk drives. A pressure gradient between the ion source and the sample chamber is generated by placing the gas inlet at the source and shooting through a tube in into the sample chamber. This saves gas and reduces contamination in UHV
applications. The principal drawback of IBS is the large amount of maintenance required to keep the ion source operating.
s is made by reactive sputtering.
in diamond-like
form on a substrate. Any carbon atoms landing on the substrate which fail to bond properly in the diamond crystal lattice will be knocked off by the secondary beam. NASA
used this technique to experiment with depositing diamond films on turbine
blades in the 1980s. IAS is used in other important industrial applications such as creating tetrahedral amorphous carbon
surface coatings on hard disk
platters and hard transition metal nitride coatings on medical implants.
is generated in a side chamber opening into the main process chamber, containing the target and the substrate to be coated. As the plasma is generated remotely, and not from the target itself (as in conventional magnetron sputtering), the ion
current to the target is independent of the voltage applied to the target.
is led through an opening in a metal subjected to a negative electrical potential. Enhanced plasma densities occur in the hollow cathode, if the pressure in the chamber p and a characteristic dimension L of the hollow cathode obey the Paschen
relation 0.5 Pa·m < p·L < 5 Pa·m. This causes a high flux of ions on the surrounding surfaces and a large sputter effect. The hollow-cathode based gas flow sputtering may thus be associated with large deposition rates up to values of a few µm/min.
morphologies to sputter deposition. In a study on metallic layers prepared by DC sputtering, he extended the structure zone concept initially introduced by Movchan and Demchishin for evaporated films. Thornton introduced a further structure zone T, which was observed at low argon pressures and characterized by densely packed fibrous grains. The most important point of this extension was to emphasize the pressure p as a decisive process parameter. In particular, if hyperthermal techniques like sputtering etc. are used for the sublimation of source atoms, the pressure governs via the mean free path
the energy distribution with which they impinge on the surface of the growing film. Next to the deposition temperature Td the chamber pressure or mean free path should thus always be specified when considering a deposition process.
Since sputter deposition belongs to the group of plasma-assisted processes, next to neutral atoms also charged species (like argon ions) hit the surface of the growing film, and this component may exert a large effect. Denoting the fluxes of the arriving ions and atoms by Ji and Ja, it turned out that the magnitude of the Ji/Ja ratio plays a decisive role on the microstructure
and morphology obtained in the film. The effect of ion bombardment may quantitatively be derived from structural parameters like preferred orientation of crystallites or texture
and from the state of residual stress
. It has been shown recently that textures and residual stresses may arise in gas-flow sputtered Ti layers that compare to those obtained in macroscopic Ti work pieces subjected to a severe plastic deformation by shot peening
.
Physical vapor deposition
Physical vapor deposition is a variety of vacuum deposition and is a general term used to describe any of a variety of methods to deposit thin films by the condensation of a vaporized form of the desired film material onto various workpiece surfaces...
(PVD) method of depositing thin film
Thin film
A thin film is a layer of material ranging from fractions of a nanometer to several micrometers in thickness. Electronic semiconductor devices and optical coatings are the main applications benefiting from thin film construction....
s by sputtering
Sputtering
Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. It is commonly used for thin-film deposition, etching and analytical techniques .-Physics of sputtering:...
, that is ejecting, material from a "target," that is source, which then deposits onto a "substrate," such as a silicon wafer. Resputtering
Resputtering
Resputtering involves re-emission of material, e.g., SiO2, deposited by sputtering during the deposition. Similar to sputtering, the re-emission is caused by ion bombardment of the deposited material. The resputtering technique was first published by L.I. Maissel et al. in the Journal of Applied...
is re-emission of the deposited material during the deposition process by ion or atom bombardment.
Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction — order 1% — of the ejected particles are ionized) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering). Alternatively, at higher gas pressures, the ions collide with the gas atoms that act as a moderator and move diffusively, reaching the substrates or vacuum chamber wall and condensing after undergoing a random walk. The entire range from high-energy ballistic impact to low-energy thermalized motion is accessible by changing the background gas pressure. The sputtering gas is often an inert gas such as argon. For efficient momentum transfer, the atomic weight of the sputtering gas should be close to the atomic weight of the target, so for sputtering light elements neon is preferable, while for heavy elements krypton or xenon are used. Reactive gases can also be used to sputter compounds. The compound can be formed on the target surface, in-flight or on the substrate depending on the process parameters. The availability of many parameters that control sputter deposition make it a complex process, but also allow experts a large degree of control over the growth and microstructure of the film.
Uses of sputtering
Sputtering is used extensively in the semiconductorSemiconductor
A semiconductor is a material with electrical conductivity due to electron flow intermediate in magnitude between that of a conductor and an insulator. This means a conductivity roughly in the range of 103 to 10−8 siemens per centimeter...
industry to deposit thin films of various materials in integrated circuit
Integrated circuit
An integrated circuit or monolithic integrated circuit is an electronic circuit manufactured by the patterned diffusion of trace elements into the surface of a thin substrate of semiconductor material...
processing. Thin antireflection coatings on glass for optical
Optics
Optics is the branch of physics which involves the behavior and properties of light, including its interactions with matter and the construction of instruments that use or detect it. Optics usually describes the behavior of visible, ultraviolet, and infrared light...
applications are also deposited by sputtering. Because of the low substrate temperatures used, sputtering is an ideal method to deposit contact metals for thin-film transistor
Thin-film transistor
A thin-film transistor is a special kind of field-effect transistor made by depositing thin films of a semiconductor active layer as well as the dielectric layer and metallic contacts over a supporting substrate. A common substrate is glass, since the primary application of TFTs is in liquid...
s. Perhaps the most familiar products of sputtering are low-emissivity
Emissivity
The emissivity of a material is the relative ability of its surface to emit energy by radiation. It is the ratio of energy radiated by a particular material to energy radiated by a black body at the same temperature...
coatings on glass
Glass
Glass is an amorphous solid material. Glasses are typically brittle and optically transparent.The most familiar type of glass, used for centuries in windows and drinking vessels, is soda-lime glass, composed of about 75% silica plus Na2O, CaO, and several minor additives...
, used in double-pane window assemblies. The coating is a multilayer containing silver
Silver
Silver is a metallic chemical element with the chemical symbol Ag and atomic number 47. A soft, white, lustrous transition metal, it has the highest electrical conductivity of any element and the highest thermal conductivity of any metal...
and metal oxide
Oxide
An oxide is a chemical compound that contains at least one oxygen atom in its chemical formula. Metal oxides typically contain an anion of oxygen in the oxidation state of −2....
s such as zinc oxide
Zinc oxide
Zinc oxide is an inorganic compound with the formula ZnO. It is a white powder that is insoluble in water. The powder is widely used as an additive into numerous materials and products including plastics, ceramics, glass, cement, rubber , lubricants, paints, ointments, adhesives, sealants,...
, tin oxide
Tin oxide
Tin oxide may refer to:* Tin oxide , SnO* Tin dioxide , SnO2...
, or titanium dioxide
Titanium dioxide
Titanium dioxide, also known as titanium oxide or titania, is the naturally occurring oxide of titanium, chemical formula . When used as a pigment, it is called titanium white, Pigment White 6, or CI 77891. Generally it comes in two different forms, rutile and anatase. It has a wide range of...
. Sputtering is also used to metalize plastics such as potato chip bags. A large industry has developed around tool bit coating using sputtered nitrides, such as titanium nitride
Titanium nitride
Titanium nitride is an extremely hard ceramic material, often used as a coating on titanium alloys, steel, carbide, and aluminium components to improve the substrate's surface properties....
, creating the familiar gold colored hard coat. Sputtering is also used as the process to deposit the metal (e.g. aluminium) layer during the fabrication of CDs and DVDs.
Hard disk surfaces use sputtered CrOx and other sputtered materials. Sputtering is one of the main processes of manufacturing optical waveguides and is another way for making efficient photovoltaic solar cells.
Comparison with other deposition methods
An important advantage of sputter deposition is that even materials with very high melting points are easily sputtered while evaporation of these materials in a resistance evaporator or Knudsen cellKnudsen Cell
In crystal growth, Knudsen Cells are often used as sources evaporators for relatively low partial pressure elementary sources...
is problematic or impossible. Sputter deposited films have a composition close to that of the source material. The difference is due to different elements spreading differently because of their different mass (light elements are deflected more easily by the gas) but this difference is constant. Sputtered films typically have a better adhesion on the substrate than evaporated films. A target contains a large amount of material and is maintenance free making the technique suited for ultrahigh vacuum applications. Sputtering sources contain no hot parts (to avoid heating they are typically water cooled) and are compatible with reactive gases such as oxygen. Sputtering can be performed top-down while evaporation must be performed bottom-up. Advanced processes such as epitaxial growth are possible.
Some disadvantages of the sputtering process are that the process is more difficult to combine with a lift-off process for structuring the film. This is because the diffuse transport, characteristic of sputtering, makes a full shadow impossible. Thus, one cannot fully restrict where the atoms go, which can lead to contamination problems. Also, active control for layer-by-layer growth is difficult compared to pulsed laser deposition
Pulsed laser deposition
Pulsed laser deposition is a thin film deposition technique where a high power pulsed laser beam is focused inside a vacuum chamber to strike a target of the material that is to be deposited...
and inert sputtering gases are built into the growing film as impurities.
Types of sputter deposition
Sputtering sources are usually magnetrons that utilize strong electric and magnetic fields to trap electrons close to the surface of the magnetron, which is known as the target. The electrons follow helical paths around the magnetic field lines undergoing more ionizing collisions with gaseous neutrals near the target surface than would otherwise occur. (As the target material is depleted, a "racetrack" erosion profile may appear on the surface of the target, as seen in the photo at right.) The sputter gas is inert, typically argonArgon
Argon is a chemical element represented by the symbol Ar. Argon has atomic number 18 and is the third element in group 18 of the periodic table . Argon is the third most common gas in the Earth's atmosphere, at 0.93%, making it more common than carbon dioxide...
. The extra argon ions created as a result of these collisions leads to a higher deposition rate. It also means that the plasma
Plasma (physics)
In physics and chemistry, plasma is a state of matter similar to gas in which a certain portion of the particles are ionized. Heating a gas may ionize its molecules or atoms , thus turning it into a plasma, which contains charged particles: positive ions and negative electrons or ions...
can be sustained at a lower pressure. The sputtered atoms are neutrally charged and so are unaffected by the magnetic trap. Charge build-up on insulating targets can be avoided with the use of RF sputtering where the sign of the anode-cathode bias is varied at a high rate. RF sputtering works well to produce highly insulating oxide films but only with the added expense of RF power supplies and impedance matching networks. Stray magnetic fields leaking from ferromagnetic targets also disturb the sputtering process. Specially designed sputter guns with unusually strong permanent magnets must often be used in compensation.
Ion-beam sputtering
Ion-beam sputtering (IBS) is a method in which the target is external to the ion sourceIon source
An ion source is an electro-magnetic device that is used to create charged particles. These are used primarily to form ions for mass spectrometers, optical emission spectrometers, particle accelerators, ion implanters and ion engines.- Electron ionization :...
. A source can work without any magnetic field like in a hot filament ionization gauge
Hot filament ionization gauge
The hot-filament ionization gauge, sometimes called a hot-filament gauge or hot-cathode gauge, is the most widely used low-pressure measuring device for the region from 10-3 to 10-10 torr...
. In a Kaufman
Harold R. Kaufman
Harold R. Kaufman is an American physicist, noted for his development of electrostatic ion thrusters for NASA during the 1950s and '60s...
source ions are generated by collisions with electrons that are confined by a magnetic field as in a magnetron. They are then accelerated by the electric field emanating from a grid toward a target. As the ions leave the source they are neutralized by electrons from a second external filament. IBS has an advantage in that the energy and flux of ions can be controlled independently. Since the flux that strikes the target is composed of neutral atoms, either insulating or conducting targets can be sputtered. IBS has found application in the manufacture of thin-film heads for disk drives. A pressure gradient between the ion source and the sample chamber is generated by placing the gas inlet at the source and shooting through a tube in into the sample chamber. This saves gas and reduces contamination in UHV
Ultra high vacuum
Ultra-high vacuum is the vacuum regime characterised by pressures lower than about 10−7 pascal or 100 nanopascals . UHV requires the use of unusual materials in construction and by heating the entire system to 180°C for several hours to remove water and other trace gases which adsorb on the...
applications. The principal drawback of IBS is the large amount of maintenance required to keep the ion source operating.
Reactive sputtering
In reactive sputtering, the deposited film is formed by chemical reaction between the target material and a gas which is introduced into the vacuum chamber. Oxide and nitride films are often fabricated using reactive sputtering. The composition of the film can be controlled by varying the relative pressures of the inert and reactive gases. Film stoichiometry is an important parameter for optimizing functional properties like the stress in SiNx and the index of refraction of SiOx. The transparent indium tin oxide conductor that is used in optoelectronics and solar cellSolar cell
A solar cell is a solid state electrical device that converts the energy of light directly into electricity by the photovoltaic effect....
s is made by reactive sputtering.
Ion-assisted deposition
In ion-assisted deposition (IAD), the substrate is exposed to a secondary ion beam operating at a lower power than the sputter gun. Usually a Kaufman source like that used in IBS supplies the secondary beam. IAD can be used to deposit carbonCarbon
Carbon is the chemical element with symbol C and atomic number 6. As a member of group 14 on the periodic table, it is nonmetallic and tetravalent—making four electrons available to form covalent chemical bonds...
in diamond-like
Diamond
In mineralogy, diamond is an allotrope of carbon, where the carbon atoms are arranged in a variation of the face-centered cubic crystal structure called a diamond lattice. Diamond is less stable than graphite, but the conversion rate from diamond to graphite is negligible at ambient conditions...
form on a substrate. Any carbon atoms landing on the substrate which fail to bond properly in the diamond crystal lattice will be knocked off by the secondary beam. NASA
NASA
The National Aeronautics and Space Administration is the agency of the United States government that is responsible for the nation's civilian space program and for aeronautics and aerospace research...
used this technique to experiment with depositing diamond films on turbine
Turbine
A turbine is a rotary engine that extracts energy from a fluid flow and converts it into useful work.The simplest turbines have one moving part, a rotor assembly, which is a shaft or drum with blades attached. Moving fluid acts on the blades, or the blades react to the flow, so that they move and...
blades in the 1980s. IAS is used in other important industrial applications such as creating tetrahedral amorphous carbon
Diamond-like carbon
Diamond-like carbon exists in seven different forms of amorphous carbon materials that display some of the typical properties of diamond. They are usually applied as coatings to other materials that could benefit from some of those properties. All seven contain significant amounts of sp3...
surface coatings on hard disk
Hard disk
A hard disk drive is a non-volatile, random access digital magnetic data storage device. It features rotating rigid platters on a motor-driven spindle within a protective enclosure. Data is magnetically read from and written to the platter by read/write heads that float on a film of air above the...
platters and hard transition metal nitride coatings on medical implants.
High-target-utilization sputtering
Sputtering may also be performed by remote generation of a high density plasma. The plasmaPlasma (physics)
In physics and chemistry, plasma is a state of matter similar to gas in which a certain portion of the particles are ionized. Heating a gas may ionize its molecules or atoms , thus turning it into a plasma, which contains charged particles: positive ions and negative electrons or ions...
is generated in a side chamber opening into the main process chamber, containing the target and the substrate to be coated. As the plasma is generated remotely, and not from the target itself (as in conventional magnetron sputtering), the ion
Ion
An ion is an atom or molecule in which the total number of electrons is not equal to the total number of protons, giving it a net positive or negative electrical charge. The name was given by physicist Michael Faraday for the substances that allow a current to pass between electrodes in a...
current to the target is independent of the voltage applied to the target.
High-power impulse magnetron sputtering (HIPIMS)
HIPIMS is a method for physical vapor deposition of thin films which is based on magnetron sputter deposition. HIPIMS utilizes extremely high power densities of the order of kW/cm2 in short pulses (impulses) of tens of microseconds at low duty cycle of < 10%.Gas flow sputtering
Gas flow sputtering makes use of the hollow cathode effect, the same effect by which hollow cathode lamps operate. In gas flow sputtering a working gas like argonArgon
Argon is a chemical element represented by the symbol Ar. Argon has atomic number 18 and is the third element in group 18 of the periodic table . Argon is the third most common gas in the Earth's atmosphere, at 0.93%, making it more common than carbon dioxide...
is led through an opening in a metal subjected to a negative electrical potential. Enhanced plasma densities occur in the hollow cathode, if the pressure in the chamber p and a characteristic dimension L of the hollow cathode obey the Paschen
Friedrich Paschen
Louis Karl Heinrich Friedrich Paschen , was a German physicist, known for his work on electrical discharges. He is also known for the Paschen series, a series of hydrogen spectral lines in the infrared region that he first observed in 1908...
relation 0.5 Pa·m < p·L < 5 Pa·m. This causes a high flux of ions on the surrounding surfaces and a large sputter effect. The hollow-cathode based gas flow sputtering may thus be associated with large deposition rates up to values of a few µm/min.
Structure and morphology
In 1974 J. A. Thornton applied the structure zone model for the description of thin filmThin film
A thin film is a layer of material ranging from fractions of a nanometer to several micrometers in thickness. Electronic semiconductor devices and optical coatings are the main applications benefiting from thin film construction....
morphologies to sputter deposition. In a study on metallic layers prepared by DC sputtering, he extended the structure zone concept initially introduced by Movchan and Demchishin for evaporated films. Thornton introduced a further structure zone T, which was observed at low argon pressures and characterized by densely packed fibrous grains. The most important point of this extension was to emphasize the pressure p as a decisive process parameter. In particular, if hyperthermal techniques like sputtering etc. are used for the sublimation of source atoms, the pressure governs via the mean free path
Mean free path
In physics, the mean free path is the average distance covered by a moving particle between successive impacts which modify its direction or energy or other particle properties.-Derivation:...
the energy distribution with which they impinge on the surface of the growing film. Next to the deposition temperature Td the chamber pressure or mean free path should thus always be specified when considering a deposition process.
Since sputter deposition belongs to the group of plasma-assisted processes, next to neutral atoms also charged species (like argon ions) hit the surface of the growing film, and this component may exert a large effect. Denoting the fluxes of the arriving ions and atoms by Ji and Ja, it turned out that the magnitude of the Ji/Ja ratio plays a decisive role on the microstructure
Microstructure
Microstructure is defined as the structure of a prepared surface or thin foil of material as revealed by a microscope above 25× magnification...
and morphology obtained in the film. The effect of ion bombardment may quantitatively be derived from structural parameters like preferred orientation of crystallites or texture
Texture (crystalline)
In materials science, texture is the distribution of crystallographic orientations of a polycrystalline sample. A sample in which these orientations are fully random is said to have no texture. If the crystallographic orientations are not random, but have some preferred orientation, then the...
and from the state of residual stress
Residual stress
Residual stresses are stresses that remain after the original cause of the stresses has been removed. They remain along a cross section of the component, even without the external cause. Residual stresses occur for a variety of reasons, including inelastic deformations and heat treatment...
. It has been shown recently that textures and residual stresses may arise in gas-flow sputtered Ti layers that compare to those obtained in macroscopic Ti work pieces subjected to a severe plastic deformation by shot peening
Shot peening
Shot peening is a cold working process used to produce a compressive residual stress layer and modify mechanical properties of metals. It entails impacting a surface with shot with force sufficient to create plastic deformation...
.