Immersion lithography
Encyclopedia
Immersion lithography is a photolithography
resolution enhancement technique for manufacturing integrated circuits (ICs) that replaces the usual air gap between the final lens and the wafer surface with a liquid medium that has a refractive index
greater than one. The resolution
is increased by a factor equal to the refractive index
of the liquid. Current immersion lithography tools use highly purified water for this liquid, achieving feature sizes below 45 nanometers. ASML
, Nikon
and Canon are currently the only manufacturers of immersion lithography systems. An enhancement is HydroLith immersion technology which allows a "measure dry, expose wet" process.
of the imaging equipment, the numerical aperture being the sine of the maximum refraction angle multiplied by the refractive index of the medium through which the light travels. The lenses in the highest resolution "dry" photolithography scanners focus light in a cone whose boundary is nearly parallel to the wafer surface. As it is impossible to increase resolution by further refraction, additional resolution is obtained by inserting an immersion medium with a higher index of refraction between the lens and the wafer. The blurriness is reduced by a factor equal to the refractive index of the medium. For example, for water immersion using ultraviolet light at 193 nm wavelength, the index of refraction is 1.44.
The resolution enhancement from immersion lithography is about 30-40% (depending on materials used). The depth of focus, or tolerance in wafer topography flatness, is also ~2x better than a corresponding "dry" tool at the same resolution.
The successful emergence of immersion lithography comes not just from its ability to extend resolution and depth of focus, but also from its timely introduction to the industry (e.g., IBM, AMD) between 65 nm and 45 nm nodes.
Intel's 32 nm process uses second-generation high-k, metal gate technology, but this will be the first time Intel has deployed immersion lithography.
. Degassing the fluid, carefully constraining the fluid thermodynamics
and carefully treating the top layer of photoresist have been key to the implementation of immersion lithography. Defects intrinsic to immersion lithography have been identified. Reducing particle generation due to the water dispensing unit was found to reduce the incidence of defects. Water also has been shown to extract acid from photoresist. Specifically, photoacid generators (PAGs) are extracted into the water, which produce acid upon radiation exposure. This must be managed to ensure the lens is not corroded by the acid or contaminated by the extracted agents, and the photoresist is not chemically altered to the point of being defective. Still, since diffusion of contaminants is expected to be much slower in water than in air or vacuum, consideration of optics contamination actually favors immersion lithography. Water-soaked photoresist also has been demonstrated to produce very satisfactory images.
In addition, 193 nm light has been known to ionize water, producing solvated electron
s, which may spread and react with the photoresist, affecting the resolution performance.
The above defect concerns have led to considerations of using a topcoat layer directly on top of the photoresist. This topcoat would serve as a barrier for chemical diffusion between the liquid medium and the photoresist. In addition, the interface between the liquid and the topcoat would be optimized for watermark reduction. At the same time, defects from topcoat use should be avoided.
As scanning speeds typically approach 500 mm/s for high-volume manufacturing, the actual resist-water contact time in any given exposure area is minimal. Hence the main concerns for defects are water left behind (watermarks) and loss of resist-water adhesion (air gap). The hydrophobicity of the surface and the water delivery/removal method are therefore the key areas to address. Other areas where defects may be enhanced are at the wafer edge, where the water has to do an "about-face" (reverse motion). It is important for the water not to pick up defects from the wafer backside.
Generally, implementation into manufacturing is only considered when defect yields reach a mature level, e.g., comparable to dry lithography levels.
, UMC
, Toshiba
, and TI
are ramping for the 45 nm node using immersion lithography. AMD's Fab 36 is already equipped for using immersion lithography for its 65 nm, 45 nm and 32 nm node technologies. AMD has also made preparations for advanced design for manufacturability (DFM), including layout regularity and double patterning
at the 22 nm node, using immersion lithography. For the 32 nm node in 2009, Intel will begin using immersion lithography as well. Intel has confirmed that since EUV
will not be available, it will extend 193 nm immersion lithography to the 22 nm node and 15 nm node. Intel has already outlined a path to use 193 nm immersion lithography down to 11 nm node. IBM has also stated that it will be using immersion lithography for the 22 nm node, since no other alternative is available at this time.
Enhancements necessary to extend the technology beyond the 32 nm
node are currently being investigated. Such enhancements include the use of higher refractive-index materials in the final lens, immersion fluid, and photoresist, in order to improve the resolution with single patterning. Currently, the most promising high-index lens material is lutetium aluminum garnet
, with a refractive index of 2.14. High-index immersion fluids are approaching refractive index values of 1.7. These new developments allow the optical resolution to approach ~30 nm. However, it is expected that at some point below 40 nm, current photoresists will limit further scaling. Polarization effects due to high angles of interference in the photoresist also have to be considered as features approach 40 nm. Hence, new photoresists will need to be developed for sub-40 nm applications.
On the other hand, double patterning
has received interest recently since it can potentially increase the half-pitch resolution by a factor of 2. This could allow the use of immersion lithography tools beyond the 32 nm
node, potentially to the 16 nm
node. While double patterning improves pitch resolution, it must rely on non-lithographic methods, such as trimming, to actually reduce the feature size, possibly by as much as 50%.
Photolithography
Photolithography is a process used in microfabrication to selectively remove parts of a thin film or the bulk of a substrate. It uses light to transfer a geometric pattern from a photomask to a light-sensitive chemical "photoresist", or simply "resist," on the substrate...
resolution enhancement technique for manufacturing integrated circuits (ICs) that replaces the usual air gap between the final lens and the wafer surface with a liquid medium that has a refractive index
Refractive index
In optics the refractive index or index of refraction of a substance or medium is a measure of the speed of light in that medium. It is expressed as a ratio of the speed of light in vacuum relative to that in the considered medium....
greater than one. The resolution
Angular resolution
Angular resolution, or spatial resolution, describes the ability of any image-forming device such as an optical or radio telescope, a microscope, a camera, or an eye, to distinguish small details of an object...
is increased by a factor equal to the refractive index
Refractive index
In optics the refractive index or index of refraction of a substance or medium is a measure of the speed of light in that medium. It is expressed as a ratio of the speed of light in vacuum relative to that in the considered medium....
of the liquid. Current immersion lithography tools use highly purified water for this liquid, achieving feature sizes below 45 nanometers. ASML
ASML Holding
ASML is a Dutch company and the largest supplier in the world of photolithography systems for the semiconductor industry. The company manufactures machines for the production of integrated circuits , such as RAM and flash memory chips and CPUs.-Products:...
, Nikon
Nikon
, also known as just Nikon, is a multinational corporation headquartered in Tokyo, Japan, specializing in optics and imaging. Its products include cameras, binoculars, microscopes, measurement instruments, and the steppers used in the photolithography steps of semiconductor fabrication, of which...
and Canon are currently the only manufacturers of immersion lithography systems. An enhancement is HydroLith immersion technology which allows a "measure dry, expose wet" process.
Benefits of immersion lithography
The ability to resolve features in optical lithography is directly related to the numerical apertureNumerical aperture
In optics, the numerical aperture of an optical system is a dimensionless number that characterizes the range of angles over which the system can accept or emit light. By incorporating index of refraction in its definition, NA has the property that it is constant for a beam as it goes from one...
of the imaging equipment, the numerical aperture being the sine of the maximum refraction angle multiplied by the refractive index of the medium through which the light travels. The lenses in the highest resolution "dry" photolithography scanners focus light in a cone whose boundary is nearly parallel to the wafer surface. As it is impossible to increase resolution by further refraction, additional resolution is obtained by inserting an immersion medium with a higher index of refraction between the lens and the wafer. The blurriness is reduced by a factor equal to the refractive index of the medium. For example, for water immersion using ultraviolet light at 193 nm wavelength, the index of refraction is 1.44.
The resolution enhancement from immersion lithography is about 30-40% (depending on materials used). The depth of focus, or tolerance in wafer topography flatness, is also ~2x better than a corresponding "dry" tool at the same resolution.
The successful emergence of immersion lithography comes not just from its ability to extend resolution and depth of focus, but also from its timely introduction to the industry (e.g., IBM, AMD) between 65 nm and 45 nm nodes.
Intel's 32 nm process uses second-generation high-k, metal gate technology, but this will be the first time Intel has deployed immersion lithography.
Manufacturing issues
The main obstacle to adoption of immersion lithography systems has been defects and other possible sources of yield loss. Early studies focused on the elimination of bubbles in the immersion fluid, temperature and pressure variations in the immersion fluid, and immersion fluid absorption by the photoresistPhotoresist
A photoresist is a light-sensitive material used in several industrial processes, such as photolithography and photoengraving to form a patterned coating on a surface.-Tone:Photoresists are classified into two groups: positive resists and negative resists....
. Degassing the fluid, carefully constraining the fluid thermodynamics
Thermodynamics
Thermodynamics is a physical science that studies the effects on material bodies, and on radiation in regions of space, of transfer of heat and of work done on or by the bodies or radiation...
and carefully treating the top layer of photoresist have been key to the implementation of immersion lithography. Defects intrinsic to immersion lithography have been identified. Reducing particle generation due to the water dispensing unit was found to reduce the incidence of defects. Water also has been shown to extract acid from photoresist. Specifically, photoacid generators (PAGs) are extracted into the water, which produce acid upon radiation exposure. This must be managed to ensure the lens is not corroded by the acid or contaminated by the extracted agents, and the photoresist is not chemically altered to the point of being defective. Still, since diffusion of contaminants is expected to be much slower in water than in air or vacuum, consideration of optics contamination actually favors immersion lithography. Water-soaked photoresist also has been demonstrated to produce very satisfactory images.
In addition, 193 nm light has been known to ionize water, producing solvated electron
Solvated electron
A solvated electron is a free electron in a solution. Solvated electrons occur widely although they are often not observed directly. The deep colour of solutions of alkali metals in ammonia arises form the presence of solvated electrons: blue when dilute and copper-colored when more concentrated...
s, which may spread and react with the photoresist, affecting the resolution performance.
The above defect concerns have led to considerations of using a topcoat layer directly on top of the photoresist. This topcoat would serve as a barrier for chemical diffusion between the liquid medium and the photoresist. In addition, the interface between the liquid and the topcoat would be optimized for watermark reduction. At the same time, defects from topcoat use should be avoided.
As scanning speeds typically approach 500 mm/s for high-volume manufacturing, the actual resist-water contact time in any given exposure area is minimal. Hence the main concerns for defects are water left behind (watermarks) and loss of resist-water adhesion (air gap). The hydrophobicity of the surface and the water delivery/removal method are therefore the key areas to address. Other areas where defects may be enhanced are at the wafer edge, where the water has to do an "about-face" (reverse motion). It is important for the water not to pick up defects from the wafer backside.
Generally, implementation into manufacturing is only considered when defect yields reach a mature level, e.g., comparable to dry lithography levels.
Future of immersion lithography
As of 2007, many companies, including IBMIBM
International Business Machines Corporation or IBM is an American multinational technology and consulting corporation headquartered in Armonk, New York, United States. IBM manufactures and sells computer hardware and software, and it offers infrastructure, hosting and consulting services in areas...
, UMC
United Microelectronics Corporation
UMC was founded as Taiwan's first semiconductor company in 1980 as a spin-off of the government-sponsored Industrial Technology Research Institute .-Overview:...
, Toshiba
Toshiba
is a multinational electronics and electrical equipment corporation headquartered in Tokyo, Japan. It is a diversified manufacturer and marketer of electrical products, spanning information & communications equipment and systems, Internet-based solutions and services, electronic components and...
, and TI
Texas Instruments
Texas Instruments Inc. , widely known as TI, is an American company based in Dallas, Texas, United States, which develops and commercializes semiconductor and computer technology...
are ramping for the 45 nm node using immersion lithography. AMD's Fab 36 is already equipped for using immersion lithography for its 65 nm, 45 nm and 32 nm node technologies. AMD has also made preparations for advanced design for manufacturability (DFM), including layout regularity and double patterning
Double patterning
Multiple patterning is a class of technologies for manufacturing integrated circuits , developed for photolithography to enhance the feature density. The simplest case of multiple patterning is double patterning, where a conventional lithography process is enhanced to produce double the expected...
at the 22 nm node, using immersion lithography. For the 32 nm node in 2009, Intel will begin using immersion lithography as well. Intel has confirmed that since EUV
Extreme ultraviolet lithography
Extreme ultraviolet lithography is a next-generation lithography technology using an extreme ultraviolet wavelength, currently expected to be 13.5 nm.-EUVL light source:...
will not be available, it will extend 193 nm immersion lithography to the 22 nm node and 15 nm node. Intel has already outlined a path to use 193 nm immersion lithography down to 11 nm node. IBM has also stated that it will be using immersion lithography for the 22 nm node, since no other alternative is available at this time.
Enhancements necessary to extend the technology beyond the 32 nm
32 nanometer
The 32 nm process is the step following the 45 nanometer process in CMOS semiconductor device fabrication. 32 nanometer refers to the average half-pitch of a memory cell at this technology level...
node are currently being investigated. Such enhancements include the use of higher refractive-index materials in the final lens, immersion fluid, and photoresist, in order to improve the resolution with single patterning. Currently, the most promising high-index lens material is lutetium aluminum garnet
Lutetium aluminum garnet
Lutetium aluminium garnet is a ceramic material that has been proposed for use as a high refractive index lens material. When doped with cerium it also exhibits scintillation with visible luminescence, making it a candidate for high energy photon detection....
, with a refractive index of 2.14. High-index immersion fluids are approaching refractive index values of 1.7. These new developments allow the optical resolution to approach ~30 nm. However, it is expected that at some point below 40 nm, current photoresists will limit further scaling. Polarization effects due to high angles of interference in the photoresist also have to be considered as features approach 40 nm. Hence, new photoresists will need to be developed for sub-40 nm applications.
On the other hand, double patterning
Double patterning
Multiple patterning is a class of technologies for manufacturing integrated circuits , developed for photolithography to enhance the feature density. The simplest case of multiple patterning is double patterning, where a conventional lithography process is enhanced to produce double the expected...
has received interest recently since it can potentially increase the half-pitch resolution by a factor of 2. This could allow the use of immersion lithography tools beyond the 32 nm
32 nanometer
The 32 nm process is the step following the 45 nanometer process in CMOS semiconductor device fabrication. 32 nanometer refers to the average half-pitch of a memory cell at this technology level...
node, potentially to the 16 nm
16 nanometer
The 16 nanometer node is the technology node following the 22 nm node. The exact naming of the technology nodes comes from the International Technology Roadmap for Semiconductors . By conservative ITRS estimates the 16 nm technology is projected to be reached by semiconductor companies in the...
node. While double patterning improves pitch resolution, it must rely on non-lithographic methods, such as trimming, to actually reduce the feature size, possibly by as much as 50%.