Isobutylgermane
Encyclopedia
Isobutylgermane, (CH3)2CHCH2GeH3, is an organogermanium compound
. It is a colourless, volatile liquid that is used in MOVPE (Metalorganic Vapor Phase Epitaxy
) as an alternative to germane
. IBGe is used in the deposition of Ge films and Ge-containing thin semiconductor
films such as SiGe
in strained silicon
application, and GeSbTe
in NAND Flash applications.
) and atomic layer deposition
(ALD) of semiconductors. It possesses very high vapor pressure and is considerably less hazardous than germane gas. IBGe also offers lower decomposition temperature (the onset of decomposition at ca. 325-350 °C)., coupled with advantages of low carbon incorporation and reduced main group elemental impurities in epitaxially grown germanium comprising layers such as Ge, SiGe
, SiGeC, strained silicon
, GeSb, and GeSbTe
.
(now part of The Dow Chemical Company
), IMEM, and CNRS have developed a process to grow germanium films on germanium at low temperatures in a Metalorganic Vapor Phase Epitaxy (MOVPE) reactor using isobutylgermane. The research targets Ge/III-V hetero devices. It has been demonstrated that the growth of high quality germanium films at temperatures as low as 350 °C can be achieved. The low growth temperature of 350 °C achievable with this new precursor has eliminated the memory effect of germanium in III-V materials. Recently IBGe is used to deposit Ge epitaxial films on a Si or Ge substrate, followed by the MOVPE deposition of InGaP and InGaAs layers with no memory effect, to enable triple-junction solar cells and integration of III-V compounds with Silicon
and Germanium
.
Organogermanium compound
Organogermanium compounds are organometallic compounds containing a carbon to germanium or hydrogen to germanium chemical bond. Organogermanium chemistry is the corresponding chemical science...
. It is a colourless, volatile liquid that is used in MOVPE (Metalorganic Vapor Phase Epitaxy
Epitaxy
Epitaxy refers to the deposition of a crystalline overlayer on a crystalline substrate, where the overlayer is in registry with the substrate. In other words, there must be one or more preferred orientations of the overlayer with respect to the substrate for this to be termed epitaxial growth. The...
) as an alternative to germane
Germane
Germane is the chemical compound with the formula GeH4, and the germanium analogue of methane. It is the simplest germanium hydride and one of the most useful compounds of germanium. Like the related compounds silane and methane, germane is tetrahedral. It burns in air to produce GeO2 and...
. IBGe is used in the deposition of Ge films and Ge-containing thin semiconductor
Semiconductor
A semiconductor is a material with electrical conductivity due to electron flow intermediate in magnitude between that of a conductor and an insulator. This means a conductivity roughly in the range of 103 to 10−8 siemens per centimeter...
films such as SiGe
SiGe
SiGe , or silicon-germanium, is a general term for the alloy Si1−xGex which consists of any molar ratio of silicon and germanium. It is commonly used as a semiconductor material in integrated circuits for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors...
in strained silicon
Strained silicon
Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium...
application, and GeSbTe
GeSbTe
GeSbTe, Germanium-Antimony-Tellurium or GST is a phase change material from the group of chalcogenide glasses, used in rewritable optical discs and phase-change memory applications. Its recrystallization time is 20 nanoseconds, allowing bitrates of up to 35 Mbit/s to be written, and direct...
in NAND Flash applications.
Properties
IBGe is a non-pyrophoric liquid source for chemical vapor deposition (CVDCVD
CVD can refer to:* Cardiovascular disease, the class of diseases that involve the heart or blood vessels* Countervailing duties, a mean to restrict international trade...
) and atomic layer deposition
Atomic layer deposition
Atomic layer deposition is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. The majority of ALD reactions use two chemicals, typically called precursors. These precursors react with a surface one-at-a-time in a sequential manner...
(ALD) of semiconductors. It possesses very high vapor pressure and is considerably less hazardous than germane gas. IBGe also offers lower decomposition temperature (the onset of decomposition at ca. 325-350 °C)., coupled with advantages of low carbon incorporation and reduced main group elemental impurities in epitaxially grown germanium comprising layers such as Ge, SiGe
SiGe
SiGe , or silicon-germanium, is a general term for the alloy Si1−xGex which consists of any molar ratio of silicon and germanium. It is commonly used as a semiconductor material in integrated circuits for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors...
, SiGeC, strained silicon
Strained silicon
Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium...
, GeSb, and GeSbTe
GeSbTe
GeSbTe, Germanium-Antimony-Tellurium or GST is a phase change material from the group of chalcogenide glasses, used in rewritable optical discs and phase-change memory applications. Its recrystallization time is 20 nanoseconds, allowing bitrates of up to 35 Mbit/s to be written, and direct...
.
Uses
Rohm and HaasRohm and Haas
Rohm and Haas Company, a Philadelphia, Pennsylvania based company, manufactures miscellaneous materials. Formerly a Fortune 500 Company, Rohm and Haas employs more than 17,000 people in 27 countries, with its last sales revenue reported as an independent company at USD 8.9 billion. On July 10,...
(now part of The Dow Chemical Company
Dow Chemical Company
The Dow Chemical Company is a multinational corporation headquartered in Midland, Michigan, United States. As of 2007, it is the second largest chemical manufacturer in the world by revenue and as of February 2009, the third-largest chemical company in the world by market capitalization .Dow...
), IMEM, and CNRS have developed a process to grow germanium films on germanium at low temperatures in a Metalorganic Vapor Phase Epitaxy (MOVPE) reactor using isobutylgermane. The research targets Ge/III-V hetero devices. It has been demonstrated that the growth of high quality germanium films at temperatures as low as 350 °C can be achieved. The low growth temperature of 350 °C achievable with this new precursor has eliminated the memory effect of germanium in III-V materials. Recently IBGe is used to deposit Ge epitaxial films on a Si or Ge substrate, followed by the MOVPE deposition of InGaP and InGaAs layers with no memory effect, to enable triple-junction solar cells and integration of III-V compounds with Silicon
Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. A tetravalent metalloid, it is less reactive than its chemical analog carbon, the nonmetal directly above it in the periodic table, but more reactive than germanium, the metalloid directly below it in the table...
and Germanium
Germanium
Germanium is a chemical element with the symbol Ge and atomic number 32. It is a lustrous, hard, grayish-white metalloid in the carbon group, chemically similar to its group neighbors tin and silicon. The isolated element is a semiconductor, with an appearance most similar to elemental silicon....
.
Further reading
- IBGe: Brief description from National Compound Semiconductor Roadmap.
- Élaboration et Physique des Structures Épitaxiées (LPN) Hétérostructures III-V pour l’optoélectronique sur Si: Article in French from LPN-CNRS, France.
- Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films; Journal of Crystal Growth, January 25, 2006.
- Ge Precursors for Strained Si and Compound Semiconductors; Semiconductor International, April 1, 2006.
- 摘要 随着Ge重要性的提高，需要寻找比GeH4更适用的前驱物。本文对用于应变Si和化合半导体集成电路的两种新型Ge前驱物的品质特性进行了探讨。当集成度不断增加,锗也变得日益重要。; Semiconductor International Chinese Edition, June 1, 2006.
- 歪みSiと化合物半導体向けの Geプリカーサ; Semiconductor International Japanese Edition, August 1, 2006.
- Development of New Germanium Precursors for SiGe Epitaxy; Deo Shenai and Egbert Woelk, Presentation at 210th ECS Meeting, Cancun, Mexico, October 29, 2006.